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Let's analyze each statement:i. Doping introduces impurities (donor or acceptor atoms) into a semiconductor, significantly increasing the concentration of free charge carriers (electrons or holes). This directly improves its conductivity. (True)ii. While doping provides a higher concentration of charge carriers, making the semiconductor's behavior less dependent on thermal generation compared to intrinsic semiconductors, it does not make it totally immune to ambient temperature. Temperature still affects carrier mobility and can cause further generation of electron-hole pairs, altering its properties. (False)iii. Doping involves adding impurity atoms which either donate extra electrons (n-type) or accept electrons, creating holes (p-type). This fundamentally changes the relative concentrations of electrons and holes, thus altering the composition of charge carriers. (True)Therefore, statements i and iii are true.